Nils G. Weimann received the Diploma degree in Physics from the University of Stuttgart, Germany, in 1996, and a Ph.D. in Electrical Engineering from Cornell University, Ithaca, NY, USA in 1999. He then joined Lucent Technology’s Bell Labs in Murray Hill, NJ (now part of Nokia), researching InP and GaN device and circuit technology. Since 2012 he has been with the Ferdinand-Braun-Institut in Berlin, Germany. His research group there is focused on indium phosphide HBT technology, including hetero-integration with silicon. Dr. Weimann has authored or co-authored more than 100 publications and conference contributions, and holds 12 patents in the field of high-frequency electronics and integrated optoelectronics.
Dr. Weimann received the Young Scientist Award from the 2005 International Symposium of Compound Semiconductors. He has served as a member of the Device and Technology Technical Program Committee, CSICS (Compound Semiconductor Integrated Circuit Symposium) from 2009-2011, and since 2009 as member of the Electron Device Program Committee of IPRM (International conference on Indium Phosphide and related materials, now part of CSW, Compound semiconductor week).